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Evidences for ambient oxidation of indium nitride quantum dots

✍ Scribed by Thirumaleshwara N. Bhat; Mohana K. Rajpalke; Basanta Roul; Mahesh Kumar; S. B. Krupanidhi; Neeraj Sinha

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
384 KB
Volume
248
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

Investigations were carried out on the ambient condition oxidation of self‐assembled, fairly uniform indium nitride (InN) quantum dots (QDs) fabricated on p‐Si substrates. Incorporation of oxygen in to the outer shell of the QDs was confirmed by the results of transmission electron microscopy (TEM), X‐ray photoemission spectroscopy (XPS). As a consequence, a weak emission at high energy (∼1.03 eV) along with a free excitonic emission (0.8 eV) was observed in the photoluminescence spectrum. The present results confirm the incorporation of oxygen into the lattice of the outer shell of InN QDs, affecting their emission properties.

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