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Evidence of the influence of heavy-doping induced bandgap narrowing on the collector current of strained SiGe-base heterojunction bipolar transistors

✍ Scribed by J. Poortmans; S.C. Jain; M. Caymax; A. Van Ammel; J. Nijs; R.P. Mertens; R. Van Overstraeten


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
277 KB
Volume
19
Category
Article
ISSN
0167-9317

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