Evidence of hole filling or hybridization in Y1−xPrxBa2Cu3O7−δ and Nd1>−xCexBa2Cu3O7−δ thin films

✍ Scribed by G. Cao; Jorge Bolivar; J.W. O'Reilly; J.E. Crow; R.J. Kennedy; P. Pernambuco-Wise

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 303 KB
• Volume: 186-188
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90769-3

✦ Synopsis

The electrical resistivities of thin films of Yl_xPrxBazCu307 a and Nd~ xCexBazCu307 a have been measured as a function of temperature, magnetic field and concentration x. The p(T, x) behavior of the metastable Ce-doped samples closely follows that of the Pr-doped compounds, suggesting that the depression of T c is due to a common mechanism and that hole filling rather than magnetic pair breaking may be the dominant mechanism. This argument is supported by measurements of the upper critical field H~2 for the Pr-doped system.