Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier
โ Scribed by Sasaki, T.; Oikawa, T.; Suzuki, T.; Shiraishi, M.; Suzuki, Y.; Noguchi, K.
- Book ID
- 114654123
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 352 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9464
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๐ SIMILAR VOLUMES
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth o
Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin