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Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures

✍ Scribed by Rotondaro, A.L.P.; Magnusson, U.K.; Claeys, C.; Flandre, D.; Terao, A.; Colinge, J.-P.


Book ID
114535085
Publisher
IEEE
Year
1993
Tongue
English
Weight
674 KB
Volume
40
Category
Article
ISSN
0018-9383

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