Evidence for the co-existence of two- and three-dimensional electron gases in the emitter of double barrier devices
✍ Scribed by B.R.A. Neves; J.F. Sampaio; E.S. Alves; M.V.B. Moreira; A.G. de Oliveira
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 241 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We have analysed the dimensionality of the emitter electron gas of double barrier devices (DBD) under bias and found evidence for the coexistence of both two-and three-dimensional (2D and 3D) electron gases. Magnetotunneling measurements performed on a series of n-type GaAs/(AlGa)As DBD with varying emitter doping profiles have shown that the electron gas may have a 2D and/or 3D character depending on the emitter doping level and on the applied bias. In devices with heavily doped emitter layers, electrons tunnel from 3D-states, whereas for lightly doped emitters a 2D-electron gas is formed in the emitter contact. For intermediary doping levels both 2D-and 3D-electron gases may coexist, depending on the applied bias.