Evidence for a metal–insulator transitio
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M. D'iorio; D. Brown; J. Lam; D. Stewart; S. Deblois; H. Lafontaine
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Article
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1998
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Elsevier Science
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English
⚖ 71 KB
The temperature dependence of the resistivity of gated Si-SiGe quantum-well structures has revealed a metal-insulator transition as a function of carrier density at zero magnetic field. Although early scaling theories have argued against the existence of a metal-insulator transition at zero temperat