Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron siliconn-channel MOS transistor

✍ Scribed by Borzdov, V. M.; Borzdov, A. V.; Speransky, D. S.; V’yurkov, V. V.; Orlikovsky, A. A.

• Book ID: 125394578
• Publisher: Springer
• Year: 2014
• Tongue: English
• Weight: 369 KB
• Volume: 43
• Category: Article
• ISSN: 1063-7397
• DOI: 10.1134/S1063739714010028