Evaluation of the effect of fabrication tolerances on the ground-state energy of electrostatically defined quantum dots
β Scribed by M. Macucci; G. Iannaccone; C. Vieu; H. Launois; Y. Jin
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 242 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
β¦ Synopsis
We have investigated the precision achievable, with state-of-the-art lithography, in the fabrication of quantum dots for the realization of quantum cellular automaton cells, and we have compared it with the requirements for proper device operation. Our conclusion is that a simple 'hole-array' approach is not feasible, and that individual tuning of each dot is necessary.
π SIMILAR VOLUMES
We analyze differences between ground-state electron densities of a model molecular complex obtained by solving the KohnαSham equations with constrained electron density Ε½ .w Ε½ .x KSCED Wesolowski and Warshel, J. Phys. Chem. 97, 8050 1993 and as a solution of the standard KohnαSham equations applied
We carried out variational model calculations for the assessment of the combined effect of the nonparabolicity of the electron effective mass and the screening of the donor ion by the valence electrons of GaAs for a donor placed at the center of a spherical quantum dot. We considered finite confinin