Evaluation of physical parameters of localized states in insulating Y–Ba–Cu–O layers by means of electronic transport measurements
✍ Scribed by O. Morán
- Book ID
- 104081431
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 473 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
Electronic transport measurements were carried out on YBa 2 Cu 3 O 7 À d /insulator/Au planar junctions in order to determine physical parameters of the localized states in thin insulating Y-Ba-Cu-O layers. In doing so, 12 Â 5 mm 2 YBa 2 Cu 3 O 7 À d /insulator/Au junction areas were defined by standard lithographic techniques and Ar ion milling. The analysis of the conductance of the junction at high-temperature or high-bias voltages showed that Mott's variable-range hopping conduction model is appropriated to describe the electrical behavior of the junction in this regime. From the fitting procedure, important physical parameters of the barrier such as the localization length a À 1 ( $ 3 Å), the average barrier height f ( $ 0.5 eV) or the variable range hopping length ' in ( $ 20 Å at $ 300 K) were estimated. The experimentally estimated values were physically reasonable and comparable to those reported for other oxide materials.