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Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O8+δ stacked junctions

✍ Scribed by K. Inomata; S. Sato; K. Nakajima; S.-J. Kim; T. Hatano; Y. Takano; M. Nagao; T. Yamashita


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
352 KB
Volume
412-414
Category
Article
ISSN
0921-4534

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Josephson tunneling I-V characteristics have been observed in break j unctions of oxygen-annealed Bi2Sr2CaCu2Os (Bi-2212 ) single crystals, with foR. ~ 21.3 mV, and with a sharp quasipartiele edge at 2zt ~ 2 × 20 mV. This demonstrates that low values of the IoR. product, thus far as observed in HTS

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Critical currents along the c-axis have been studied in single crystalline Bi2Sr2CaCu208+ 8 in magnetic fields. It is ohserved that the current-voltage relation has a sudden jump with a characteristic hysteresis, reminiscent of the typical Josephson junction character. The maximum critical current d