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Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon

โœ Scribed by Soo Hong Lee; Martin A. Green

Book ID
112821642
Publisher
Springer US
Year
1991
Tongue
English
Weight
944 KB
Volume
20
Category
Article
ISSN
0361-5235

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The aim of this experiment is to grow a thin silicon layer (<50ยตm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 ยตm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi