Estimation of screened plasma resonance frequencies of a layered semiconductor using a single oblique incidence reflectance spectrum

✍ Scribed by Foltin, O.

• Book ID: 105363870
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 222 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622303

✦ Synopsis

Abstract

The second derivative of a simulated oblique incidence specular reflectance spectrum of infrared radiation, polarized parallel to the plane of incidence, shows the possibility of estimating the values of two screened plasma resonance frequencies of an optically uniaxial semiconductor by knowledge of a single spectrum. The use of a basal plane reflection surface enables us, in a case of a layered semiconductor, to avoid a troublesome production and a poor spectroscopic quality of the reflection surface oriented normal to the easy cleavage plane, otherwise needed for one of the normal incidence reflectance measurements. For the calculations the parameters of a Bi~2~Se~3~ crystal were used. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)