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Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

✍ Scribed by Henson, W.K.; Ahmed, K.Z.; Vogel, E.M.; Hauser, J.R.; Wortman, J.J.; Venables, R.D.; Xu, M.; Venables, D.


Book ID
115542411
Publisher
IEEE
Year
1999
Tongue
English
Weight
192 KB
Volume
20
Category
Article
ISSN
0741-3106

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