Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from ``dangling bondΒΊ defects whose total concentration increases with the dose and decreases after anneali
β¦ LIBER β¦
ESR studies of incorporation of phosphorus into high-pressure synthetic diamond
β Scribed by Isoya, J.; Kanda, H.; Akaishi, M.; Morita, Y.; Ohshima, T.
- Book ID
- 123382224
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 580 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0925-9635
No coin nor oath required. For personal study only.
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This book is a review of the science and technology of the element carbon and its allotropes: graphite, diamond and the fullerenes. This field has expanded greatly in the last three decades stimulated by many major discoveries such as carbon fibers, low-pressure diamond, and the fullerenes. The need