ESPRIT MORSE: research for novel metal-organic precursors

✍ Scribed by F. Scholz

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 614 KB
• Volume: 21
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90336-l

✦ Synopsis

This paper reviews the research work done in the ESPRIT project MORSE concerning investigations of novel precursors for metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE) and their applications in the growth of optoelectronic device structures. Of the many compounds which have been studied, diethylaluminumhydridetrimethylamine-adduct (DEAIH-TMN), dimethylaminopropyl-dimethyl-indum (DADI), tert-butyl-phosphine (TBP), bisphosphine-ethane (BPE) and tert-butyl-arsine (TBAs) have been found to be the best replacements for conventional precursors. Lasers emitting around 1.55 ~m and 980 nm have been grown using alternative group III and group V precursors. They demonstrate that the same, or even better, performance can be obtained with these alternatives.