Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE

✍ Scribed by Wagner, V. ;Parillaud, O. ;Bühlmann, H. J. ;Ilegems, M.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 230 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<429::aid-pssa429>3.0.co;2-a