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Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE

✍ Scribed by T. Nlarschner; F.D. Tichelaar; M.R. Leys; R.T.H. Rongen; C.A. Verschuren; H. Vonk; J.H. Wolter

No coin nor oath required. For personal study only.

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