✦ LIBER ✦
Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°C : W. G. Townsend and M. E. Uddin. Solid St. Electron. 16 (1973), p. 39
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 103 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0026-2714
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