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Epitaxial growth of GaN on (0001) Al2O3via solution-cast seed layer formation process using Ga(mDTC)3

โœ Scribed by Do Hoon Kim; Umme Farva; Woo Sik Jung; Eui Jung Kim; Chinho Park


Book ID
107514018
Publisher
Springer US
Year
2008
Tongue
English
Weight
993 KB
Volume
25
Category
Article
ISSN
0256-1115

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Preparation of (111)-Oriented Epitaxial
โœ Iwao Yamaguchi; Tsuyoshi Terayama; Takaaki Manabe; Tetsuo Tsuchiya; Mitsugu Sohm ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 593 KB

We have succeeded in preparing the (111)-oriented epitaxial 5lms of magnetite (Fe 3 O 4 ) and maghemite ( -Fe 2 O 3 ), or Fe 3ุŠx O 4 , on the C-planes of sapphire [ -Al 2 O 3 (0001)] by a coating-pyrolysis (CP) process using postepitaxial topotaxy (PET). In this set of 5lm and substrate, not only th