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Epitaxial growth of GaAs films on Cr-doped GaAs substrates by ionized Ga and As beam deposition

โœ Scribed by Katsuhiro Yokota; Susumu Tamura; Saichi Katayama


Book ID
107789782
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
897 KB
Volume
75
Category
Article
ISSN
0022-0248

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Growth dynamics of GaAs, AlAs and (Al, G
โœ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Springer US ๐ŸŒ English โš– 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0