<P>This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques suc
Epitaxial graphene on silicon carbide : modeling, characterization, and applications
β Scribed by Godignon, Philippe; Rius, Gemma
- Publisher
- Pan Stanford Publishing
- Year
- 2018
- Tongue
- English
- Leaves
- 261
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Table of Contents
Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material ScienceGabriel Ferro Growth Mechanism, Structures, and the Properties of Graphene on SiC {0001} Surfaces: Theoretical and Experimental Studies at the Atomic ScaleWataru Norimatsu Fabrication of Graphene by Thermal Decomposition of SiCG. Reza Yazdi, Tihomir Iakimova, and Rositza Yakimova Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001)F. Giannazzo, I. Deretzis, A. La Magna, G. Nicotra, C. Spinella, F. Roccaforte, and R. YakimovaTheory of Graphene Growth on SiC SubstrateHiroyuki KageshimaEpitaxial Graphene on SiC from the Viewpoint of Planar TechnologyGemma RiusThe Beauty of Quantum Transport in GrapheneB. Jouault, F. Schopfer, and W. PoirierRaman Spectroscopy of Graphene on Silicon CarbideAna BallestarGraphene on SiC: Chemico-Physical CharacterizationMicaela Castellino and Jordi Fraxedas
β¦ Subjects
Graphene;Silicon carbide;Epitaxy;SCIENCE / Physics / Electricity;SCIENCE / Physics / Electromagnetism
π SIMILAR VOLUMES
<P>This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques suc
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference beginsΒ with an overview of porous wide-band-gap technolo
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference beginsΒ with an overview of porous wide-band-gap technology
<p><b><i>A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications<br /><br /><br /></i></b>Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first