Environmentally harmonious etching process for cleaning amorphous silicon and tungsten in chemical vapor deposition chamber
✍ Scribed by Kazushi Fujita; Shigeto Kobayashi; Masafumi Ito; Masaru Hori; Toshio Goto
- Book ID
- 104420778
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 122 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
Novel cleaning process harmonized environmentally by using O 2 plasma with a new ¯uorocarbon radical source has been developed for replacing the conventional process using green house gases, such as SF 6 gas and ¯uorocarbon feed gases causing global warming. The new ¯uorocarbon radical source was designed to generate ¯uorocarbon reactive species from polytetra¯uoroethylene (PTFE) by CO 2 laser ablation. An electron cyclotron resonance (ECR) O 2 plasma equipped with the ¯uorocarbon radical source has been applied to amorphous silicon (a-Si) and tungsten (W) etchings for chamber cleaning process after chemical vapor deposition (CVD). As a result, the etchings of a-Si and W were successfully demonstrated. These results indicate this process is potentially applied to the chamber cleaning process keeping harmony with the environment, particularly for preventing global warming.