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Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices

โœ Scribed by Isik.C. Kizilyalli; K. Hess; T. Higman; M. Emanuel; J.J. Coleman


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
164 KB
Volume
31
Category
Article
ISSN
0038-1101

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In modern deep-submicron devices, for achieving optimum device performance, the doping densities must be quite high. This necessitates a careful treatment of the short-and long-range electron-electron and electron-impurity interactions. We have shown before that by using a corrected Coulomb force, i