𝔖 Bobbio Scriptorium
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Enhancement of the reverse-bias second breakdown capability of high-voltage power transistors by using emitter-open turn off

✍ Scribed by Chen, D.Y.; Jackson, B.


Book ID
119813486
Publisher
IEEE
Year
1980
Tongue
English
Weight
351 KB
Volume
68
Category
Article
ISSN
0018-9219

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