Enhancement of the Capture Rate of Excess Carriers Due to Acousto-Electric Amplification

✍ Scribed by G. Nimtz

• Book ID: 104543730
• Publisher: John Wiley and Sons
• Year: 1972
• Tongue: English
• Weight: 369 KB
• Volume: 54
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220540114

✦ Synopsis

Abstract

The recombination behaviour of excess carriers was investigated during the process of acousto‐electric amplification. The experiments were carried out with the piezoelectric semiconductor tellurium. A decrease of the lifetime of the excess carriers was observed up to four orders of magnitude depending on the intensity of the amplified acoustic flux. The new recombination effect is explained by about 10^18^ states/cm^3^ in the forbidden band. These states are a consequence of the random nature of the carrier potential energy in the acousto‐electrically amplified flux, as was shown by Bonch‐Bruevich quite recently. The high intensity flux gives rise to a density of states in the band gap analogous to disordered semiconductors.