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Enhancement of Memory Performance Using Doubly Stacked Si-Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV

✍ Scribed by Kyu Il Han; Yong Min Park; Sung Kim; Suk-Ho Choi; Kyung Joong Kim; Il Han Park; Byung-Gook Park


Book ID
114618581
Publisher
IEEE
Year
2007
Tongue
English
Weight
400 KB
Volume
54
Category
Article
ISSN
0018-9383

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