Enhancement of ballistic transport in an AlGaAs/InGaAs high electron mobility transistor at low temperatures

✍ Scribed by Kim, Nambin; Kim, Yongmin; Kang, Soohyun; Jung, Kyooho; Jung, Woong; Im, Hyunsik; Kim, Hyungsang; Rhee, J.-K.; Shin, Donghoon

• Book ID: 118231160
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 502 KB
• Volume: 90
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2719231