Abstract
The improved performance of polyalkylfluorene light‐emitting device has been achieved through the optimization of processing conditions and device configuration. The current density, brightness, power efficiency, and operation lifetime of polymer light‐emitting device (PLED) were strongly dependent on the surface treatment of anode, the film thickness of light‐emitting polymer (LEP), and the cathode configuration. The anode surface treated with O~2~ plasma exhibited a higher current density and brightness than the CF~4~ plasma treated device. However, better operation stability was obtained for the CF~4~ plasma treated device than for the O~2~ plasma treated device. The maximum of brightness and power efficiency has been achieved for the PLED with an LEP thickness of 80 nm. The PLED with LiF/Ca/Al cathode possesses a better power efficiency and operation stability than does the Ca/Al or LiF/Al based PLED. The influences of device fabrication conditions and device configuration on the performance of a polyalkylfluorene‐based PLED are discussed in detail. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 133–141, 2006