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Enhanced performance of bottom-contact organic field-effect transistors with M(DMDCNQI)2 buffer layers

✍ Scribed by Yan Yu; Masato Kanno; Hiroshi Wada; Yoshimasa Bando; Minoru Ashizawa; Akihiko Tanioka; Takehiko Mori


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
403 KB
Volume
405
Category
Article
ISSN
0921-4526

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✦ Synopsis


Source and drain electrodes made of Cu or Ag in organic field-effect transistors are treated with an organic acceptor, dimethyldicyanoquinonediimine (DMDCNQI). The performance of the resulting bottom-contact pentacene transistor is improved by two orders, and is comparable to the Au topcontact devices.