Enhanced performance by inserting ultrathin SiO2layer in organic light-emitting devices

✍ Scribed by Niu, Lianbin ;Zhang, Fujia

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 455 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622396

✦ Synopsis

Abstract

Improved performance of organic light‐emitting devices (OLEDs) has been obtained by insertion of an ultrathin film of silicon oxide (SiO~2~) at the interface of 8‐hydroxyquinoline aluminum (Alq~3~) and N,N ′‐bis(1‐naphthyl)‐N,N ′‐diphenyl‐1,1′‐biphenyl‐4,4′‐diamine (NPB) layers. When a 1.0 nm SiO~2~ film was inserted, for an unoptimized indium–tin oxide (ITO)/NPB/SiO~2~/Alq~3~/Al device, the current efficiency was as high as 7.35 cd/A. Compared with conventional devices, a higher efficiency has been achieved. The mechanism of performance enhancement is discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)