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Enhanced Operation in Charge-Trapping Nonvolatile Memory Device With $\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{HfO}_{2}$ Charge-Trapping Layer
✍ Scribed by Ye, Zong-Hao; Chang-Liao, Kuei-Shu; Tsai, Cheng-Yu; Tsai, Tzu-Ting; Wang, Tien-Ko
- Book ID
- 120091085
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 582 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0741-3106
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