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Enhanced Light Extraction from Nanoporous Surfaces of InGaN/GaN-Based Light Emitting Diodes

✍ Scribed by Kim, Keunjoo; Choi, Jaeho; Bae, Tae Sung; Jung, Mi; Woo, Deok Ha


Book ID
127269669
Publisher
Institute of Pure and Applied Physics
Year
2007
Tongue
English
Weight
259 KB
Volume
46
Category
Article
ISSN
0021-4922

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Greatly enhanced performance of InGaN/Ga
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## Abstract For the first time we demonstrate InGaN/GaN‐based nanorod light emitting diodes (LEDs) with both very good current–voltage (__I__–__V__) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers commercially available using sel