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Enhanced electron transfer in real-space transfer devices using strained InxGa1-xAs (x = 0.15, 0.25) channel layers

✍ Scribed by Jiun-Tsuen Lai; Joseph Ya-min Lee


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
427 KB
Volume
150
Category
Article
ISSN
0022-0248

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