Enhanced Breakdown Voltage, Diminished Quasi-Saturation, and Self-Heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliability: A TCAD Simulation Study

✍ Scribed by Roy, S.D.; Kumar, M.J.

• Book ID: 125847131
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 732 KB
• Volume: 6
• Category: Article
• ISSN: 1530-4388
• DOI: 10.1109/TDMR.2006.876600