Energy transfer and charge carrier capture processes in wide-band-gap scintillators

✍ Scribed by Nikl, M. ;Laguta, V. V. ;Vedda, A.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 228 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200673866

✦ Synopsis

Abstract

Electron and hole trapping phenomena below room temperature were studied by simultaneous use of electron paramagnetic resonance (EPR) and thermostimulated luminescence (TSL) experiments in Ce‐doped YAlO~3~, Y~3~Al~5~O~12~ and Lu~3~Al~5~O~12~ single crystals. Charge‐carrier trapping associated with O^–^ centers and antisite Y(Lu)~Al~ defects in perovskite and garnet structures, respectively, was evidenced by EPR and associated with the dominant TSL peaks. Existence of F^+^ centers was proved by EPR in YAlO~3~. A Ce^3+^ ion at the Al site and spatially correlated Ce~Lu~ and Lu~Al~ centers were evidenced in Lu~3~Al~5~O~12~ by the same method. Spatial correlation of the latter two centers is further supported by the associated tunneling‐driven radiative recombination process evidenced by phosphorescence decay. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)