Energy distribution of thermally stimula
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Article
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1978
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Elsevier Science
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English
β 160 KB
Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible. A simple tight-binding model is describ