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Energy relaxation to acoustic phonons in surface inversion layers

✍ Scribed by K. Hess


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
77 KB
Volume
25
Category
Article
ISSN
0038-1098

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We have shown that for quantum wells placed close to the stress-free surface of the semiconductor heterostructure, the energy relaxation rate of two-dimensional electrons interacting with acoustic phonons at low temperatures (Bloch-GrΓΌneisen regime) is changed considerably in comparison with that of