Energy relaxation in p- and n-GaAs quantum wells: Confinement effects
β Scribed by M. Tatham; R.A. Taylor; J.F. Ryan; W.I. Wang; C.T. Foxon
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 301 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(
Character and dynamics of charge carrier energy relaxation and recombination are disclosed in detail by tlme delayed and time resolved cathodoluminescence experiments of undoped and doped GaAs/Gao.6AI 0 4As multiple quantum wells with thickness 5 nm < L z < 11 nm. At all temperatures up to room temp