𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Energy loss spectroscopy of dislocations in GaN and diamond: a comparison of experiment and calculations

✍ Scribed by Gutiérrez-Sosa, A.; Bangert, U.; Harvey, A.J.; Fall, C.; Jones, R.


Book ID
123513218
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
372 KB
Volume
12
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Electron energy loss spectroscopy of def
✍ Bangert, U. ;Barnes, R. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 534 KB

## Abstract Localised energy loss spectroscopy (EELS) is carried out in order to extract information of the effect of extended defects on the electronic bandstructure in diamond. EELS is performed in a dedicated cold field emission scanning transmission electron microscope (STEM), equipped with a G

Comparison of diamond bias enhanced nucl
✍ Hoffman, A. ;Michaelson, Sh. ;Akhvlediani, R. ;Hangaly, N. K. ;Gsell, S. ;Bresci 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 508 KB

## Abstract Bias enhanced nucleation (BEN) is the crucial process step to generate epitaxially oriented diamond nuclei on various substrates comprising elemental semiconductors, carbides and non‐carbide forming metals. Numerous studies on Si and SiC have shown that the diamond growth immediately st