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Energy loss of H+ and He+ in the semiconductors GaAs, ZnSe, InP and SiC

✍ Scribed by Santiago Heredia-Avalos; Juan Carlos Moreno-Marín; Isabel Abril; Rafael Garcia-Molina


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
299 KB
Volume
230
Category
Article
ISSN
0168-583X

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Influence of the structure of InP thin f
✍ Dr. R. Gründler; Dr. H. Boudriot; Dr. K. Deus; Prof. Dr. H. A. Sckneider; Dr. T. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 253 KB 👁 2 views

The electronic properties of I n P as an endpoint of the technologically relevant quaternary system InzGal-zAsuP1-y got a renewed interest. This led t o the very accurate determination of the dielectric function E ( E ) = cl(E)