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Energy level of neutral dangling-bond center (DO) in undoped a:Si:H determined by isothermal capacitance transient spectroscopy under high temperature

✍ Scribed by Kouji Mori; Hideyo Okushi; Kazunobu Tanaka


Book ID
115986026
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
169 KB
Volume
97-98
Category
Article
ISSN
0022-3093

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