Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments
✍ Scribed by T. M. Ritter; B. A. Weinstein; R. E. Viturro; D. P. Bour
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 291 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We report high-pressure photoluminescence (PL) experiments on GaInP/AlGaInP laser structures and a comprehensive interpretation of the results via calculations based on the Model Solid Theory (MST) of Van de Walle et al. [1,2]. This methodology allows an accurate description of the band structure and band offsets in complex heterostructures over a wide range of sample compositions and applied pressures. Measurements are performed on Ga 0X4 In 0X6 PaAl 0X6 Ga 0X4 ) 0X5 In 0X5 P (nominal compositions) double heterojunction samples having active layers of either 125 or 30 # e. The pressure data determine a reliable set of deformation potentials for the three constituent binary compounds in this system, InP, AlP and GaP. Using these deformation potentials and a realistic equation of state, the MST calculation gives a reasonable representation of the observed PL spectra over the full presure range (0 to 5 GPa) studied. The conduction band offset DE c , valence band offset DE v , and the bulk bandgap energies are computed in this materials system for a wide variety of conditions. At ambient pressure we find DE c X DE v % 70 X 30, in accord with the consensus value of the band-offset ratio in similar heterostructures. However, our calculations predict band-offset variations with both composition and applied pressure that are non-negligible. T. M. Ritter et al.: Energy Level Alignments in Strained-Layer GaInP/AlGaInP