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empirical tight-binding model applied to a Si and Ge parametrization

✍ Scribed by Boykin, Timothy B.; Klimeck, Gerhard; Oyafuso, Fabiano

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Anisotropic tight-binding model applied

✍ A. N. Ribeiro; C. A. Macedo 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 634 KB

Ideal Vacancy States in Si. A Study of t

✍ C. Tuncay; M. Tomak 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 481 KB

Tight-Binding Cluster Model for C, Si, a

✍ L. Künne; L. Skála; O. Bílek 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 308 KB

Tight-Binding Cluster Model for C, Si, a

✍ O. Bílek; L. Skála; L. Künne 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

The semi-empirical tight-binding model f

✍ Lytovchenko, V.; Kurchak, A.; Strikha, M. 📂 Article 📅 2014 🏛 American Institute of Physics 🌐 English ⚖ 724 KB

Validation and physical parametrization

✍ Milton R. Beychok 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 129 KB