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Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

✍ Scribed by Fu, Y.; Engstrom, O.; Luo, Yi

Book ID
118138845
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
385 KB
Volume
96
Category
Article
ISSN
0021-8979

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Long-wavelength emission from single InA
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate
✍ L. Beji; L. BouzaΓ―ene; B. IsmaΓ―l; L. Sfaxi; H. Maaref; H. Ben Ouada πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 182 KB

In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA