β Scribed by Seungbum Hong, Orlando Auciello, Dirk Wouters (eds.)
No coin nor oath required. For personal study only.
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. EmergingNon-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.
This book also:
Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.
Provides an overview of non-volatile memory fundamentals.
Broadens readersβ understanding of future trends in non-volatile memories.
Front Matter....Pages i-xii
Front Matter....Pages 1-1
Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories....Pages 3-35
Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits....Pages 37-101
Emerging Multiferroic Memories....Pages 103-166
Front Matter....Pages 167-167
Phase-Change Materials for Data Storage Applications....Pages 169-193
Emerging Oxide Resistance Change Memories....Pages 195-218
Oxide Based Memristive Nanodevices....Pages 219-256
Front Matter....Pages 257-257
Ferroelectric Probe Storage Devices....Pages 259-273
Optical and Electronic Materials; Solid State Physics; Spectroscopy and Microscopy; Electrical Engineering
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