## Abstract In this paper the methods of immersion ellipsometry and multiple angle of incidence ellipsometry are used for analyzing gallium arsenide single crystals covered with very thin oxide layers growing under normal laboratory conditions. The values of all the optical parameters of the system
Ellipsometric analysis of poly(3-hexylthiophene) surfaces
β Scribed by S. Marchant; W. R. E. Brakenbury; J. Horder; P. J. S. Foot
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 130 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0261-8028
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π SIMILAR VOLUMES
Dynamic viscoelasticity of poly(3-hexylthiophene) (P3HT) doped with iodine or FeC& under the influence of electric fields was studied. The doped P3HTs underwent a large decrease in elastic modulus under small electric fields on the order of 1 dc V/mm. The electric fields enhanced the loss tangent. T
The solution-processible semiconducting polymer poly(3-hexyithiophene) (P3HT) was produced by a sequence of monomer synthesis, chemical polymerization and solution phase film growth. The fundamental energy gap of the material was determined from the optical absorption spectrum to be 2.14 eV, in agr
We demonstrate that annealing conductive, solvent-case poly(3-hexylthiophene) (P3HT) films under reduced vacuum improved their structural properties and induced higher conductivity. These preliminary results suggest that thermal processing of conductive polymers may be a useful step in their future
## Abstract **Summary:** The polymerization of 2βbromoβ3βhexylβ5βiodothiophene (**1**) with isopropylmagnesium chloride and Ni(dppp)Cl~2~ was quenched with 5 M hydrochloric acid instead of water to yield headβtoβtail poly(3βhexylthiophene) (HTβP3HT) with a very low polydispersity. The $\overline M