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Elimination of interface recombination in oxide passivated silicon p^+n photodiodes by storage of negative charge on the oxide surface

✍ Scribed by Geist, J. ;Farmer, A. J. D. ;Martin, P. J. ;Wilkinson, F. J. ;Collocott, S. J.


Book ID
115329658
Publisher
The Optical Society
Year
1982
Tongue
English
Weight
866 KB
Volume
21
Category
Article
ISSN
1559-128X

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