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Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by MBE

✍ Scribed by H. Fronius; A. Fischer; K. Ploog


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
544 KB
Volume
81
Category
Article
ISSN
0022-0248

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