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Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity

✍ Scribed by Augendre, E.; Rooyackers, R.; Caymax, M.; Vandamme, E.P.; De Keersgieter, A.; Perello, C.; Van Dievel, M.; Pochet, S.; Badenes, G.


Book ID
114538223
Publisher
IEEE
Year
2000
Tongue
English
Weight
169 KB
Volume
47
Category
Article
ISSN
0018-9383

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